| 摘要 |
PURPOSE:To stabilize memory operation an make a high speed writing possible by inserting a Schottky diode in parallel in to the base collector junction of a transistor in the same polarity direction. CONSTITUTION:A memory cell 21c is constituted by forming constitution elements 21a, 21b as follows; a Schottky diode D1 is inserted in parallel to the base collector junction of an NPN transistor Tr2 having two emitters and in the same polarity direction as that of the PN junction. Metal silicide 22 is newly formed so as to bridge a part of the surface of an N-type epitaxial layer 13 and a part of the surface of a first P-type diffusion layer 15. As a result, a transistor in the memory cell 21c is prevented from entering a deep saturation operation state, and the complicated manufacturing process wherein the NPN transistor Tr2 simultaneously integrated is controlled to be in a different current amplification factor hFE, so that superflous sinking current can be resolved. Thereby the stable operation of a control circuit for writing and reading is enabled, and high speed writing operation can be attained. |
