| 摘要 |
<p>PURPOSE:To prevent deterioration of characteristics due to stress which is generated due to thermal coefficient of expansion between a semiconductor substrate and a brazing material on a barrier metal layer by introducing an aluminum layer between the barrier metal layer and an electrode metal layer and by introducing a brazing part between the electrode metal part and a connection conductor directly above the inside from the outer-periphery part of an adhesion region between the semiconductor substrate and the barrier metal region. CONSTITUTION:A Cr layer 4 of barrier metal contacts an opening of an oxide film 3 onto the upper surface of an Si substrate 1 with a p-type guard ring part 2 and an Al layer 9 is laminated onto the Cr layer 4. An Ni layer 5 and an Au layer 6 are deposited onto the Al layer 9 and the outer periphery is directly above the adhesion region between the barrier metal layer 4 and the Si substrate 1 excluding a mask. Thus, since a soft Al layer exists between the electrode metal layers 5 and 6 and the barrier metal layer 4, stress reaching an interface between the barrier metal layer 4 and the semiconductor substrate 1 is weakened due to the difference of thermal coefficient of expansion between a brazing material 7 and the semiconductor substrate 1. Then, even if the stress reaches the interface between the barrier metal layer 4 and the semiconductor substrate 1, no concentration of stress occurs at the outer periphery of adhesion region, thus preventing deterioration of characteristics.</p> |
