| 摘要 |
PURPOSE:To improve reliability of a MOS transistor and a non-volatile memory cell by forming a gate oxide film newly after forming a deposit sacrifice insulation film on the entire surface of the non-volatile memory cell region and a logic region, by coating resist, and by impregnating impurity ions only into a part where the channel region of the logic region is formed, and then releasing the resist film from the deposit sacrifice insulation. CONSTITUTION:A first gate oxide film 23 and a first polysilicon film 24 are formed on a P<-> type silicon substrate 22. Then, after the polysilicon film 24 at a logic region is released from the gate oxide film 23, a CVD oxide film 25 is deposited. Then, a resist film 26 is deposited onto the CVD oxide film 25, a part for forming a channel 27 of this resist film 26 is opened, and impurity ions are implanted into the logic region. Then, after the resist film 26 is eliminated, the CVD oxide film 25 is etched off, a second gate oxide film 28 is formed by the thermal oxidation method, and then a second polysilicon film 29 is deposited, thus preventing smear of a film which becomes a constituting element of a device.
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