发明名称 Light and X=ray sensor matrix in thin-film technique
摘要 The sensors (1), sensitive to light and/or X-ray radiation, have two electrodes (2, 6) and a semiconductor layers (5) between them. In each sensor a single electrode (2) serves as the first one. The semiconductor layer is a continuous layer common to all sensors, covering all first electrodes. The second electrode (6) forms a continuous layer, common to at least sensor groups and covering the semiconductor layer in the region of all first electrodes. It is effective as the second electrode for all sensors of the respective group. Alternatively, the continuous second electrode covers the region of all first electrodes in the matrix, effective as common second electrode.
申请公布号 DE4002429(A1) 申请公布日期 1991.08.01
申请号 DE19904002429 申请日期 1990.01.27
申请人 PHILIPS PATENTVERWALTUNG GMBH, 2000 HAMBURG, DE 发明人 CONRADS, NORBERT, HAUSET, BE;SCHIEBEL, ULRICH, DR.;WIECZOREK, HERFRIED, DR., 5100 AACHEN, DE
分类号 H01L27/146;H01L31/0224 主分类号 H01L27/146
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