| 摘要 |
PURPOSE:To unify encroachment of a solder material upon an Si wafer of semiconductor element by a method wherein a metal layer consisting of Al is made to be adhered previously to a supporting plate, then the supporting plate and the semiconductor wafer are soldered. CONSTITUTION:The Al layer 4 to be used as the solder material is adhered on the supporting plate 3. The solder material 2 and the Si wafer 1 are put thereon. Then those are heated at a high temperature to make the solder material 2 to be fused. The solder material 2 reacts with the Si wafer 1 and the Al layer 4 at the same time. Accordingly because the alloying temperature can be reduced and alloying time can be shortened, encroachement of the solder material 2 upon the Si wafer 1 is unified. |
