| 摘要 |
PURPOSE:To reduce scattering quantity of a metal wiring layer when marking of a semiconductor wafer is to be performed by a method wherein laser marking is performed using plural number of laser beams. CONSTITUTION:The wafer 5 to be inspected is fixed on a vacuum suck beas 4 of wafer prober. A probe 7 of probe card is made to come in contact with the wafer when inspection is to be performed. When the element to be inspected is disqualified, the laser beam 8 is irradiated to the surface of the element to be inspected, and the metal wiring on the surface of the element is fused to form an inferiority mark. When plural number of laser beams are used, because distribution of laser intensity can be unified, the inferiority mark can be formed without scattering the metal wiring layer. |
