| 摘要 |
PURPOSE:To increase the number of alignment marks by anew forming the alignment marks onto a dielectric film, in which the alignment marks composed of irregularities formed on the surface of a substrate are buried, applying the patterning layer of a light-transmitting, material onto the alignment marks and obliquely irradiating the substrate with beams for detection. CONSTITUTION:An alignment mark 2 is constituted by utilizing a field oxide-film forming process, a dielectric film 3 by using an inter-layer insulating-film forming process and an alignment mark 4 by utilizing a first-layer wiring-pattern forming process respectively. A microscope optical system 7 irradiates a wafer 1 with laser beams while receiving reflected light from the wafer 1, and introduces reflected light to a mark detector. The microscope optical system 7 is installed obliquely to the wafer 1, and scattered light from the protruding section 5a of a patterning layer 5a and the alignment mark 4 is introduced to the detector. On the other hand, the greater part of beams applied to the dielectric film 3 are reflected obliquely by surface. Accordingly, the number of alignment marks housed in a scribing region on the wafer 1 can be increased. |
