发明名称 |
Iron/iron nitride multilayer films. |
摘要 |
<p>In the present invention, magnetic multilayers comprising alternating iron and non-magnetic spacer layers form a multilayer magnetic film. In this multilayer magnetic film, the ratio of iron layer thickness to spacer layer thickness may be between 2 to 1 and approximately 5 to 1. Further, according to the present invention, the iron layer may have a thickness of between approximately 10 nm and approximately 100 nm. More particularly, the present invention is directed to material comprising alternating layers of iron and iron nitride. An iron/iron nitride multilayer film according to the present invention, may be manufactured using a sputter deposition process by sputtering a single layer of iron on a sputter substrate in the substantial absence of nitrogen. Followed by sputtering a single layer iron on the iron layer in an inert gas atmosphere, including a nitrogen component, to form a non-ferromagnetic spacer layer. Repeating the process to form a desired thickness of alternating layers of iron/iron nitride.</p> |
申请公布号 |
EP0438687(A1) |
申请公布日期 |
1991.07.31 |
申请号 |
EP19900123637 |
申请日期 |
1990.12.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DOVE, DEREK B.;NYWENING, ROBERT W.;RE, MARK E.;SHIH, KWANG K. |
分类号 |
C23C14/06;G11B5/31;G11B5/64;G11B5/65;G11B5/66;G11B5/738;G11B5/85;G11B5/851;H01F10/32;H01F41/30 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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