<p>A highly pure cubic boron nitride film is formed on a substrate by a method which comprises irradiating an excimer laser on a target comprising boron atoms and optionally nitrogen atom and depositing cubic boron nitride on a substrate which is placed to face the target. <IMAGE></p>
申请公布号
EP0439135(A1)
申请公布日期
1991.07.31
申请号
EP19910100819
申请日期
1991.01.23
申请人
SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人
NAKAGAMA, SHOJI, C/O ITAMI WORKS OF SUMITOMO ELEC.;FUJITA, NOBUHIKO, C/O ITAMI WORKS OF SUMITOMO ELEC;TODA, NAOHIRO, C/O ITAMI WORKS OF SUMITOMO ELEC.;NAKAYAMA, AKIRA, C/O ITAMI WORKS OF SUMITOMO ELEC.
