| 摘要 |
A cascode BiMOS driving circuit according to the present invention has an IBGBT (9) connected between a first output terminal (3) and the base of a bipolar transistor (Q1). An IGBT generally has a low on-state resistance, and hence a chip area for the IGBT (9) is not so increased, even if the breakdown voltage of the IGBT (9) is made about equal to that of the bipolar transistor (Q1). Thus, a cascode BiMOS driving circuit of low cost and low input capacitance can be implemented. Further, the IGBT (9) is gently turned off due to a so-called tail phenomenon, to prevent an abrupt turn off of the bipolar transistor (Q1), to whereby prevent an occurrence of a surge voltage. |
