发明名称 |
Method of manufacturing semiconductor device. |
摘要 |
<p>According to a method of manufacturing a high-frequency bipolar transistor, a p-type base region (2) is formed on an n-type silicon substrate (1). A first oxide film (3) and a nitride film (4) are formed on the base region (2). A base contact hole is formed by etching, and a first polysilicon film (6) containing a p-type impurity and serving as a base electrode (6) is formed thereon. A second oxide film (7) having a thickness larger than that of the first oxide film (3) is formed by thermal oxidation around the base contact hole to surround the first polysilicon film (6). A portion of the nitride film (4) which is not covered with said second oxide film (7) and a portion of the first oxide film (3) therebelow are removed by etching to form an emitter contact hole. A second polysilicon film including an n-type impurity and serving as an emitter electrode (10) is formed in the emitter contact hole. The n-type impurity in the second polysilicon film (10) is diffused in the substrate by annealing to form an n-type emitter region (11). In the completed bipolar transistor, the base electrode (6) and the emitter electrode (10) are insulated from each other by the second oxide film (7). <IMAGE></p> |
申请公布号 |
EP0438693(A2) |
申请公布日期 |
1991.07.31 |
申请号 |
EP19900123825 |
申请日期 |
1990.12.11 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YAMADA, YOSHIKI, C/O INTELLECTUAL PROPERTY DIV.;YAMAKI, BUNSHIRO, C/O INTELLECTUAL PROPERTY DIV. |
分类号 |
H01L29/73;H01L21/331;H01L23/482;H01L29/732 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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