发明名称 HIGHLY INTEGRATED BI-CMOS LOGIC CIRCUIT
摘要 The circuit using bipolar transistor and MOS transistors to reduce the number of transistors includes a number of input terminals (A,B), an equal number of MOS transistors (T1,T2) connected with one another inseries and controlled by the input signals, an equal number of MOS transistors (T3,T4) connected with one another in parallel and controlled by the input signals, an inverter (T5,T6) connected to a connection point between the transistors (T1,T2) and (T3,T4), and two bipolar transistors (Q1,Q2) base- controlled by the inverter.
申请公布号 KR910005611(B1) 申请公布日期 1991.07.31
申请号 KR19880010117 申请日期 1988.08.08
申请人 SAM SUNG ELECTRONICS CO.,LTD. 发明人 SHIN YOON-SEUNG
分类号 H03K19/00;(IPC1-7):H03K19/00 主分类号 H03K19/00
代理机构 代理人
主权项
地址