发明名称 LATCH-UP PREVENTION IN A TWO SUPPLIES, CMOS INTEGRATED CIRCUIT BY MEANS OF A SINGLE INTEGRATED MOS TRANSISTOR
摘要 Latch-up in two supplies (+VCC and -VBB) CMOS integrated circuits is prevented by means of a single integrated protection MOS transistor, N-channel for P-Well CMOS or P-channel for N-Well CMOS, having its drain (source) connected to ground and its body region, gate and source (drain) connected to -VBB (+VCC). The desired threshold voltage and dimensions of the protection transistor do not present particular problems of implementation.
申请公布号 GB2202403(B) 申请公布日期 1991.07.31
申请号 GB19880004099 申请日期 1988.02.23
申请人 * SGS-THOMSON MICROELECTRONICS S P A 发明人 CARLO * DALLAVALLE
分类号 H01L27/08;H01L27/092;H03K19/003 主分类号 H01L27/08
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