发明名称 |
LATCH-UP PREVENTION IN A TWO SUPPLIES, CMOS INTEGRATED CIRCUIT BY MEANS OF A SINGLE INTEGRATED MOS TRANSISTOR |
摘要 |
Latch-up in two supplies (+VCC and -VBB) CMOS integrated circuits is prevented by means of a single integrated protection MOS transistor, N-channel for P-Well CMOS or P-channel for N-Well CMOS, having its drain (source) connected to ground and its body region, gate and source (drain) connected to -VBB (+VCC). The desired threshold voltage and dimensions of the protection transistor do not present particular problems of implementation. |
申请公布号 |
GB2202403(B) |
申请公布日期 |
1991.07.31 |
申请号 |
GB19880004099 |
申请日期 |
1988.02.23 |
申请人 |
* SGS-THOMSON MICROELECTRONICS S P A |
发明人 |
CARLO * DALLAVALLE |
分类号 |
H01L27/08;H01L27/092;H03K19/003 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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