发明名称 |
Method of producing a complementary-type semiconductor device |
摘要 |
A method of producing a MIS transistor such as a MOS transistor has a P type and an N type channel transistors. P type and N type well regions are provided with the N type and the P type channel transistors, respectively. Both the P type and the N type well regions are covered with an insulating film on which gate electrodes are formed in a predetermined pattern by means of a photo-resist. This photo-resist is used as a channelling block layer when an N type impurity is implanted into the P type well region near the gate electrode so as to form an N type diffusion layer. As a result, the photo-resist prevents the N type impurity from channelling into the gate electrode so that a leak current does not occur within the P type well region of the N type channel transistor.
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申请公布号 |
US5036019(A) |
申请公布日期 |
1991.07.30 |
申请号 |
US19900537688 |
申请日期 |
1990.06.13 |
申请人 |
NIPPONDENSO CO., LTD. |
发明人 |
YAMANE, HIROYUKI;HIGUCHI, YASUSHI |
分类号 |
H01L29/78;H01L21/266;H01L21/336;H01L21/8238;H01L27/092 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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