| 摘要 |
In a magnetic medium used in a Bloch-line memory device and having a first groove and a pair of second grooves deeper than the first groove with the first groove formed to leave a plateau extended on a principal surface in a predetermined direction between the second groove pair and having first and second end portions, a third groove is deeper than the first groove and has two portions spaced from the second end portion parallel and orthogonal to the predetermined direction. Adjacent to the second end portion, a primary conductor pair is formed on the first groove and adjacent to the second and the third grooves. Parallel to an easy axis of magnetization which is orthogonal to the principal surface, a magnetic domain is formed to surround the plateau by a bias magnetic field applied in a preselected direction parallel to the easy axis. A pulse current is supplied to the primary conductors to generate, with a field intensity not stronger than the bias magnetic field, a first local magnetic field between the primary conductor pair substantially reversedly of the preselected direction and a second local magnetic field directed in the preselected direction at the second and the third grooves. A secondary conductor of a W shape may be formed on the first groove and adjacent to the first end portion and to the second groove with the W shape directed away from the plateau.
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