| 摘要 |
PURPOSE:To enable the manufacture of a Schottky gate type FET having an interval between electrodes in the order of submicron unit by anisotropically etching an insulating film covered on source and drain electrodes and forming a gate electrode with the insulating film remaining at the end. CONSTITUTION:An N type layer 22 is formed on a substrate 21 formed of semi-insulating Si, GaAs, and metallic layers 24, 25 ohmically contacted with the layer 22 are formed at an interval of 1-5mum. After an insulating film 32 of SiO2 is covered on the overall surface, it is anisotropically etched such as reactive ion etching, thereby remaining with SiO2 films 33, 34 only on the sides 26, 27 of the layers 24, 25, and an N type region 28 is exposed. Subsequently, metal of Cr forming an N type region 28 and a Schottky junction 36 is covered, is then patterned, and a gate electrode 37 is formed. In this manner, an FET having an interval between the electrodes formed finely can be made, the limit of heat resistivity of the gate electrode can also be obviated, and the FET can be accelerated and reduced in power consumption. |
