| 摘要 |
PURPOSE:To increase the density of a semiconductor device by forming an FET in a reverse conductive type layer formed in a substrate, applying a power voltage to the substrate to supply the voltage to a deep low density diffused layer added to a drain diffused layer, thereby eliminating the power wire to an MOS inverter. CONSTITUTION:A P type layer 101 is, for example, epitaxially grown in an N type substrate 100, an FET in which an N type region 102 deeper than an N<+> type drain region 103 is diffused in the epitaxial layer is formed, thereby forming an E/D type inverter. Or, the layers 102 103 are connected via a resistor 307 to an e type FET to form an E/R inverter. The power voltage 112 of the circuit is applied to the substrate 100 to form so that the N-P-N transistor formed of the substrate 100, the layer 101 and the diffused layer 102 becomes ON state, and is supplied to the circuit. Thus, the power wire at the surface side can be eliminated, thereby improving the degree of freedom of wiring and increasing the density of the circuit. |
