| 摘要 |
PURPOSE:To simplify a bipolar MOS production process and to improve the integration and the characteristics of an element by diffusing a reverse conductive type high density region with a recess formed in a substrate and employing a substrate structure grown with a reverse conductive type epitaxial layer in the recess. CONSTITUTION:A window is, for example, opened at a PMOS and a bipolar element forming region of an oxidized film 37 on a p type substrate 1, recesses 38-40 are etched at the substrate 1, and n<+> region 41-43 are then diffused. Subsequently, n type regions 44-46 are epitaxially grown in the recess, and an oxidized film 37 is covered on the overall surface. Thereafter, B and phosphorus are sequentially selectively diffused to form p<+> type regions 44-51 and n<+> type regions 52-54, gate oxidized films 55, 56 are then formed, aluminum is, for example, deposited, is then patterned to form electrodes is then made composite with a bipolar MOS to form an IC. Thus, the production process can be simplified to provide a high density, and parasitic effect can be reduced to improve the characteristics of the element. |
