| 摘要 |
In digital circuit technology, bipolar transistors are advantageously used for switching thanks to their high mutual conductance. Since a transistor operated in the saturation state has a retarded switching behavior, saturation must be avoided for rapid switching processes. In Schottky diodes, saturation is avoided by connecting a Schottky diode parallel to the base-collector barrier layer. However, the manufacture of Schottky diodes in integrated circuit technology entails additional process steps. The circuit in accordance with the invention avoids these additional process steps by replacing the Schottky diode with a unidirectional semiconductor element composed of field-effect transistors. BICMOS technology processes permitting monolithic integration or bipolar and MOS transistors are particularly suitable for manufacture of the circuit.
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