发明名称 |
Metal organic vapor phase epitaxial growth of group III-V semiconductor materials |
摘要 |
This invention is directed to a method of epitaxial growth by metal organic vapor phase epitaxy (MOVPE) of Group III-V compound semiconductors in a hot wall reactor. Epitaxy is accomplished by use of precursors having a metal, an organic ligand, and an inorganic ligand. The system is operated at very low pressures to provide a high throughput of wafers and a highly uniform deposition growth. The invention is further directed to the use of the class of precursors to selectively grow III-V compounds on a masked substrate, wherein growth occurs epitaxially on the exposed areas of the substrate but not on the surrounding mask.
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申请公布号 |
US5036022(A) |
申请公布日期 |
1991.07.30 |
申请号 |
US19900607846 |
申请日期 |
1990.11.01 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KUECH, THOMAS F.;TISCHLER, MICHAEL A. |
分类号 |
C30B25/02 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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