| 摘要 |
PURPOSE:To stably obtain an electrode with superior reproducibility by a method wherein a P-InP protecting layer is grown on a P-InGaAsP cap layer, a part of the P-InP protecting layer is eliminated, and an ohmic electrode is formed on a p-InGaAsP cap layer. CONSTITUTION:An N-InP buffer layer 2, an InGaAsP active layer 3, and a P-InP clad layer 4 are grown on an N-InP (100) substrate 1. A two-parallel- stripes-type pattern is formed in the <011> direction, and a mesa stripe 10 sandwiched by two parallel grooves 9 is formed by using the pattern as a mask. Next the following are epitaxially grown; a P-InP block layer 5, an N-InP block layer 6, a P-InP buried layer 7, a P-InGaAsP cap layer 8, and a P-InP protecting layer 13. At least a part of the P-InP protecting layer 13 is eliminated, a P-side electrode 11 is formed on the P-InGaAsP cap layer 8, and an N-side electrode 12 is formed on the substrate 1. A resonator for laser oscillation is formed by cleavage on the (100) face, and a semiconductor laser is obtained. |
