| 摘要 |
PURPOSE: To prevent the defects at a deep level from degrading a device by separating a burial layer from a plurality of active layers by a middle ratio Al layer. CONSTITUTION: Al burial layers 76 and 77 at the upper and lower parts of a device are separated from upper and lower active layers 72 and 75 by middle layers 78 and 79, respectively, and the middle layers use Al0↓.zGa0↓.BAs alloy for barrier layers 81 and 83 between the active regions 72 and 75. The upper burial layer 76 with 40% Al suppresses a surface-recombinating effect, thus forming a properly balanced waveguide layer for the surface skimming hetero traverse junction HTJ laser configuration of the device using a lower burial layer 77 of 40% Al. However, the burial layers 76 and 77 are separated from the active layers 72 and 75 by the middle 20% Al layers 78 and 79, thus preventing defects at a deep level, such as a DX center from degrading the device.
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