| 摘要 |
PURPOSE:To form a metal interconnection, whose coverage is good, on a sidewall of a contact hole by a method wherein an opening part whose diameter is larger than that of the contact hole exposing the surface of a substrate is formed in a part where the contact hole is to be formed in a lower-layer film and an intermediate film is bent in the part where the hole is to be formed in such a way that a sidewall of the lower-layer film prescribing the opening part and the surface of the substrate are covered. CONSTITUTION:A transfer gate oxide film 4 is formed on a semiconductor substrate 1; a transfer gate 5 is formed on it. A first interlayer insulating film 9, e.g. a silicon oxide film, is formed on it. An opening part 9a used to expose the surface of the transfer gate 5 is formed in a part where a contact hole is to be made ; its diameter is made larger than a diameter of the contact hole to be formed. An extension part 7a of a capacitor dielectric film exists on the first interlayer insulating film 9; it is bent in the part where the contact hole is to be formed in such a way that a sidewall 9b of the first interlayer insulating film 9 forming the opening part 9a and the surface 5a of the exposed transfer gate 5 are covered. A second interlayer insulating film 10, e.g. a silicon oxide film, is formed on it. |
