| 摘要 |
PURPOSE:To form a buffer layer by a method wherein a film formation, which is performed using light, charged particles, neutral particles in a long-lived excitation state, the neutral particle beam of a high kinetic energy and a low-temperature decomposition of raw gas consisting of plasma, and a diffusion of the constituent atoms of a film formed by heating a substrate are respectively executed independently of each other. CONSTITUTION:An Si substrate 11 having a clean surface is put on an MBE type growth part 16 exhausted in a vacuum to about 10<-10>Torr. Synchrotron radiation light 13 is introduced through a pipe 17 for introduction use, the substrate 11 is operated by a manipulator 19 with a heating controller 18 and the light 13 and a C3H8 molecular beam 21 are projected at 45 deg.. An energy loss spectroscopy of electrons from an electron gun 20 with a cylindrical energy analyzer on the substrate 11 is measured and when a plasmon energy peculiar to an SiC appears, a stop of heating is ordered to the controller 18 by the gun 20. Then, the substrate deposited with a C film is held at 800 deg.C, a diffusion is performed and when the peak (about 23 eV) of the plasmon energy peculiar to the SiC is brought into a main state, a heating is stopped. The diffusion distribution of B at an Si transistor part is also not changed at a substrate temperature of 800 deg.C and a heterobipolar device having good characteristics is obtained. |
