| 摘要 |
PURPOSE:To increase open circuit voltage and efficiency by bringing a second semiconductor exhibiting different kind of conductivity or metal or a conductive oxide film into contact with the tip part of protruding parts of a first semiconductor. CONSTITUTION:One side surface of an N-type Si substrate 1 is subjected to unevenness working, in which a pyramidal structure obtained by, e.g. wet etching is used. A thermosetting type silicon oxide resin film is spread on the whole surface subjected to the unevenness working and cured by heating; vertex parts of the protruding parts of the N-type Si substrate 1 are exposed by mechanical polishing; next a P-type Si film 3 is formed. In this process, the exposed parts of the N-type Si substrates 1 turn to nuclei and crystal grows. A lower electrode 6 is formed on the rear; at the same time, an antireflection film 4 and an upper electrode 5 are formed in order on the P-type Si film 3, thereby completing a solar battery. |
