| 摘要 |
<p>PURPOSE:To enable transfer high in resolution and precision irrespective of the shapes of pattern to be transferred by anisotropically etching a transparent film formed on a transparent substrate including a light-shielding member. CONSTITUTION:After the light-shielding member 2 has been formed on the surface of the transparent substrate 1, the transparent film 4 is formed on the whole surface of the substrate 1 including the member 2. At that time, the film 4 is formed in a thickness of thicker than the other places by the thickness of the member 2 near the circumferential part 2a of the member 2. Then, all the film 4 is anisotropically etched until one of the member 2 or the substrate 1 is disclosed. Since the film 4 near the circumference 2a of the member 2 is thicker, the film 4 remains along the circumference 2a of the member 2 in a thickness of almost the same as the member 2, and the phase member 3 is selectively and self-matchingly formed, thus permitting the light transmitted through only the substrate 1 and turning round into the regions of the members 3 and 2 by diffraction to interfere with the light transmitted through the member 3 and both to cancel each other, and accordingly, the light intensity distribution of the projected image of the photomask to be sharpened and high resolution to be obtained.</p> |
