Modifying distributed feedback laser grid - etches grid by ion beam such that treated part-region remain ridges in place of grid depressions

摘要

The modified distributed feedback laser grid (1) is located in a semiconductor component. At least a partial region (5) of the grid etched by an ion beam such that in the partial region remains ridges (10) at the points of the original grid groove. The ridges have dimensions sufficient for the distributed feedback laser grid. Pref. the partial region is separated from the remaining laser grid by at least one line orthogonal to the grid grooves. The separation may be also provided by a line parallel to the grid grooves. A complementary region (4) of the grid may be so etched that the ridge extension remains preserved w.r.t. the original grid. USE/ADVANTAGE - For the mfr. of semiconductor lasers, with simple mfr. with a portion shifted by a half-grid period.