发明名称 VERFAHREN ZUR HERSTELLUNG EINES MESA-STREIFENS AUF EINER HALBLEITERSCHEIBEN-KRISTALLEBENE.
摘要 A method of fabricating a semiconductor crystal mesa stripe whose waist section is narrower than the upper plane of said mesa stripe. The method comprises the steps of forming a first striped mask on the semiconductor crystal wafer in order to fabricate a prescribed mesa stripe, linearly arranging a plurality of second striped masks, narrower than said first striped mask by the prescribed waist width of the main mesa stripe, on the semiconductor wafer plane at prescribed intervals and in parallel with said first striped mask in order to fabricate monitor mesa stripes; and of subjecting said semiconductor wafer plane to mesa etching.
申请公布号 DE3583288(D1) 申请公布日期 1991.07.25
申请号 DE19853583288 申请日期 1985.12.16
申请人 KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP 发明人 FURUYAMA, HIDETO C/O PATENT DIVISION;HIRAYAMA, YUZO C/O PATENT DIVISION, MINATO-KU TOKYO 105, JP
分类号 H01L21/306;H01L21/308;H01S5/20;H01S5/22;H01S5/227 主分类号 H01L21/306
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