| 摘要 |
<p>PURPOSE:To obtain a highly reliable high-frequency and low-noise amplification GaAs FET without using an electronic ray exposure device by utilizing the overhang of a photoresist layer and by forming an insulation layer with a narrower opening pattern than an opening pattern width of the photoresist layer on the bottom of an open recess by a skew deposition of the insulation film. CONSTITUTION:After a source electrode 2 and a drain electrode 3 are formed at a GaAs operation layer 1, a photoresist layer 4 with an opening pattern in a specified width is formed at a gate region. With this photoresist layer 4 as a mask, recess etching is made to the GaAs operation layer 1 of the gate region and then an insulation film 5 is formed at a recess opening bottom 6 by a skew deposition of the insulation film. Then, a first-layer gate metal 7 is deposited from directly above and then a second-layer gate metal 8 is deposited. The insulation film 5 which is deposited onto the photoresist layer 4, the first-layer gate metal 7, and a second-layer gate metal 8 are lifted off the deposition part on a recess opening bottom 6. When a photoresist layer 4 is eliminated, only the gate part in overlay structure on the recess opening bottom 6 remains.</p> |
