HIGH POWER COMPLEX SEMICONDUCTOR LASER DIODE MANUFACTURE METHOD

摘要

The method for manufacturing a complex semiconductor laser diode having a high differential quantum efficiency, a low oscillation starting current and a stabilized fundamental tranverse mode comprises the steps of epitaxial-groowing a second conductive AlGaAs current limitting layer (12) onto a first conductive GaAs substrate (10); forming a V-channel (17) onto the substrate (10); and epitaxial- growing a P-type AlGaAs clading layer (16) and a first conductive AlGaAs connection layer (18). The AlGaAs connection layer (18) has a curved part (19).