| 摘要 |
<p>A semiconductor device includes a first substrate (3) made of a semiconductor, a first insulator layer (2, 4, 7) which is formed on the first substrate, a second substrate (1) made of a semiconductor and formed on the first insulator layer, a trench (5) which extends from a top surface of the second substrate to at least a part of the first insulator layer, and a second insulator layer (12, 13) which substantially defines a side wall of the trench. <IMAGE></p> |
