| 摘要 |
The invention relates to a method of monitoring a process of growing a thin film of silicon dioxide doped with phosphorus, comprising growing a sample thin film by the growing process to be monitored on the surface of a substrate; and determining the relative phosphorus concentration of the thin film. In the present invention, to enable simpler determination of phosphorus concentration more rapidly and more accurately than previously, the sample thin film is grown on a substrate made of a material containing no silicon, whereby it is possible to measure the intensity of the fluorescent radiation of both phosphorus and silicon separately by an X-ray fluorescence method and to determine the proportional amount of phosphorus in the thin film as the ratio of the measured intensities. The method is calibrated by preparing standard films having equal phosphorus/silicon ratios on the same substrate material. |
