发明名称 |
SEMICONDUCTOR CONTACT METAL PROTECTION |
摘要 |
<p>In a photoresist lift-off process for depositing metal on a semiconductor substrate, a protective coating of silicon is applied to an etched via hole prior to the metal deposition step. This prevents the formation of contaminant trapping voids and contaminated chemical residues which would otherwise occur at the base of the metal line subsequently deposited in the bottom of the via hole. The protective silicon layer, which has a thickness of from 100 to 300 angstroms, remains intact as a permanent part of the structure.</p> |
申请公布号 |
EP0165513(B1) |
申请公布日期 |
1991.07.24 |
申请号 |
EP19850106582 |
申请日期 |
1985.05.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FREDERICKS, EDWARD C.;NANDA, MADAN M. |
分类号 |
H01L21/3213;H01L21/027;H01L21/28;H01L21/3205;H01L21/768;H01L23/532 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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