发明名称 Nonvolatile semiconductor memory system.
摘要 <p>An EPROM integrated circuit (20) includes a plurality of banks. When a data write operation is to be performed for this EEPROM integrated circuit (20), a bank which is used once is not used again, but the operation is constantly performed for new banks. In order to select a bank, a write number storage area (21) is provided in the EPROM integrated circuit (20), and the contents of the write number storage area (21) are updated by a write number updating circuit (29) each time the write operation is performed for a new bank. &lt;IMAGE&gt;</p>
申请公布号 EP0438050(A2) 申请公布日期 1991.07.24
申请号 EP19910100033 申请日期 1991.01.02
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KONDO, HITOSHI, C/O INTELLECTUAL PROPERTY DIV.;YAMAMOTO, TETSUYA, C/O INTELLECTUAL PROPERTY DIV.;SAEKI, YUKIHIRO, C/O INTELLECTUAL PROPERTY DIV.
分类号 G11C16/34;G11C17/00;G11C16/02;G11C16/10 主分类号 G11C16/34
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