发明名称 |
Nonvolatile semiconductor memory system. |
摘要 |
<p>An EPROM integrated circuit (20) includes a plurality of banks. When a data write operation is to be performed for this EEPROM integrated circuit (20), a bank which is used once is not used again, but the operation is constantly performed for new banks. In order to select a bank, a write number storage area (21) is provided in the EPROM integrated circuit (20), and the contents of the write number storage area (21) are updated by a write number updating circuit (29) each time the write operation is performed for a new bank. <IMAGE></p> |
申请公布号 |
EP0438050(A2) |
申请公布日期 |
1991.07.24 |
申请号 |
EP19910100033 |
申请日期 |
1991.01.02 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KONDO, HITOSHI, C/O INTELLECTUAL PROPERTY DIV.;YAMAMOTO, TETSUYA, C/O INTELLECTUAL PROPERTY DIV.;SAEKI, YUKIHIRO, C/O INTELLECTUAL PROPERTY DIV. |
分类号 |
G11C16/34;G11C17/00;G11C16/02;G11C16/10 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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