Static random access memory device with pull-down control circuit

摘要

A static RAM includes a plurality of chips. The chips each comprise a plurality of memory cells for storing data, column-selecting transistors, bit-lines to which the plurality of memory cells and the column-selecting transistors are connected, and a voltage control circuit which can adjust the electrical potential of the bit-lines so as to allow the column-selecting transistors to operate when selecting one of the chips. By use of the voltage control circuit, the static RAM can operate at a high speed when not only address selecting operation but also chip selecting operation is required.