| 摘要 |
An infrared imaging device includes an infrared detector element having a pin structure which detects infrared rays 8 to 12 microns in wavelength. The pin structure comprises a multi-quantum well structure as an intrinsic layer including a plurality of AlyGa1-yAs quantum well layers sandwiched by respective AlxGa1-xAs quantum barrier layers (x>y) and a p type AlxGa1-xAs layer and an n type AlxGa1-xAs layer sandwiching the intrinsic layer. An infrared imaging device includes a plurality of picture units, each picture unit including an infrared detector element and a corresponding GaAs FET having a source region connected with the n layer of the infrared detector element on the same substrate. The picture unit and corresponding FET may be monolithically integrated on the same substrate with an n type channel in the substrate interconnecting the picture unit and the corresponding FET.
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