发明名称 |
Semiconductor substrate bias circuit |
摘要 |
A semiconductor substrate bias circuit is disclosed which comprises: first and second substrate biasing means connected in parallel between the substrate and a ground node, for pumping the charges from said substrate to said ground node or in the reverse direction in order to bias said substrate; and a detecting means for selectively enabling said first and second substrate biasing means in accordance with the levels of the substrate bias voltage. The circuit of the present invention is capable of supplying adequate bias voltages depending on the various operating modes, reducing the standby current loss at a standby state, and is suitable for being installed on a VLSI semiconductor chip.
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申请公布号 |
US5034625(A) |
申请公布日期 |
1991.07.23 |
申请号 |
US19890417314 |
申请日期 |
1989.10.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MIN, DONG-SUN;CHOI, HOON |
分类号 |
H01L27/04;G05F3/20;G11C11/408;H01L21/822;H01L27/06;H03K19/094 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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