发明名称 |
SINGLE TRANSISTOR NON-VOLATILE ELECTRICALLY ALTERABLE SEMICONDUCTOR MEMORY DEVICE WITH A RE-CRYSTALLIZED FLOATING GATE |
摘要 |
A single transistor electrically programmable and erasable memory cell (10) has a substrate (12) of a semi- conductor material of a first-conductivi- ty type (18). Within the substrate are de- fined source (16), drain (14), regions with a channel region (18) therebe- tween. A first insulating layer (20) is disposed over the subtract (12) and over the source (16) channel (18) and drain (14) regions. An electrically conductive, re-crystallized floating gate (22) is dis- posed over the first-insulating layer (20) and extends over a portion of the chan- nel region (18) and over a portion of the drain region (14) to maximize capaci- tive coupling therewith. A second insu- lating layer (25) has a top wall portion (24) over the floating gate (22) and a side wall portion (26) immediately adja- cent to the floating gate (22) and has a thickness which permits the Flowler- Nordheim tunneling of charges therethrough. An electrically conductive contr ol gate (29) has two electrically connected sections: a first section (30) is over the first insulating layer (20) and is immediately adjacent to the side-wall portion (26) of the second in- sulating layer (25). The first section (30) extends over a portion of the channel region (18) and over the source region (16). A sec- ond section (28) is disposed over the top wall portion (24) of the second insulating layer (25) to minimize capacitive coupling with the floating gate (22).
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申请公布号 |
CA2051686(A1) |
申请公布日期 |
1991.07.23 |
申请号 |
CA19912051686 |
申请日期 |
1991.01.18 |
申请人 |
SILICON STORAGE TECHNOLOGY, INC. |
发明人 |
YEH, BING;JENQ, CHING-SHI |
分类号 |
H01L21/28;H01L29/423;H01L29/788;(IPC1-7):H01L27/02;G11C11/40;H01L21/70;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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