发明名称 |
Non-volatile semiconductor memory |
摘要 |
In a non-volatile semiconductor memory of this invention, a memory cell array constituted by a plurality of memory cells is divided into a plurlaity of blocks, and erase lines which are common to the respective blocks and independent from each other are arranged. In the data write mode, a predetermined voltage is applied to only the erase line connected to a selected one of the blocks.
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申请公布号 |
US5034926(A) |
申请公布日期 |
1991.07.23 |
申请号 |
US19890392070 |
申请日期 |
1989.08.10 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAURA, TADAYUKI;ASANO, MASAMICHI;YOKOYAMA, SADAYUKI |
分类号 |
G11C17/00;G11C16/02;G11C16/10;G11C16/16 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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