Structure and fabrication method for a double trench memory cell device,申请号US19900545225-传众专利搜索

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发明名称	Structure and fabrication method for a double trench memory cell device
摘要
申请公布号	US5034787(A)	申请公布日期	1991.07.23
申请号	US19900545225	申请日期	1990.06.28
申请人	INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人	DHONG, SANG H.;HWANG, WEI
分类号	H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;H01L29/94	主分类号	H01L27/04
代理机构		代理人
主权项
地址

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