VERFAHREN ZUM AUSSCHNEIDEN VON KLEINFLAECHIGEN HALBLEITERELEMENTEN AUS EINEM GROSSFLAECHIGEN BESCHICHTETEN HALBLEITER.

摘要

An improved method for severing a large area semiconductor device, including a substrate having a base electrode region thereupon, semiconductor body and top electrode into smaller area devices includes the steps of supporting the semiconductor device from the top electrode side thereof and applying a cutting force to the substrate side of the semiconductor device so as to cut the device without establishing short circuit contact between the substrate electrode and the top electrode thereof. Also included is a large area semiconductor device having a protective layer affixed to the top electrode surface thereof. The large area device is readily adapted for severing into smaller area photovoltaic devices by the method disclosed herein.