| 摘要 |
PURPOSE:To prevent the generation of bubbles in a resist due to N2 foaming, and to inhibit the scattering of the resist due to foaming by transferring a mask pattern at fixed pressure. CONSTITUTION:The inside of a chamber 6 can be kept at fixed pressure at high pressure by operating a high pressure gas 8 and a vacuum pump 7. A fixed quantity of wafers 5 are carried into the chamber 6, a system is closed, and constant pressure is applied (or reduced) and pressure is kept constant. The wafers 5 are carried onto a stage section 4, exposure is conducted, and the operation is continued until the completion of all wafers. Accordingly, the generation of bubbles in a resist due to the foaming of N2 at the time of exposure is prevented while the scattering of the resist due to foaming can be inhibited. |
