| 摘要 |
PURPOSE:To correct a proximity effect with high accuracy in a short time by dividing a drawing pattern into a plurality of unit patterns, correcting the proximity effect and connecting a unit pattern in the same quantity of exposure. CONSTITUTION:A drawing pattern 1 is divided into unit patterns 1a-1n and a central pattern 1p and a drawing pattern 3 into unit patterns 3a-3h and a central pattern 3i respectively, and a drawing pattern 2 is not divided and drawing pattern 2 itself is formed in a unit pattern 2a because the drawing pattern 2 has the same size as the unit pattern. A proximity effect is corrected at every unit pattern, the optimum quantities of electron beams irradiated to each unit pattern are arithmetically operated respectively, mutually adjacent unit patterns, the arithmetically operated quantities of irradiation of which are equalized, are connected and drawing data are prepared, and electron-beam exposure is conducted by using the drawing data. Accordingly, the exposure method of electron beams, by which the proximity effect is corrected with high accuracy in a short time, can be acquired. |
