摘要 |
(A) Transparent electrode of conductive oxide, for photodiodes based on a Si:H for use in large area microelectronics, consists of a sequence of alternate high and low O2 content individual layers, pref. of In-Sn oxide, Sn oxide or Zn oxide. (B) Prodn. of a transparent conductive electrode of ITO, as in (A), involves forming the layer sequence by magnetron cathodic sputtering using an In-Sn alloy as target and Ar as sputtering gas in an oxygen-contg. atmos. ADVANTAGE - Electrode prodn. is compatible with the photodiode prodn. process, the electrode material has good structuring properties on a Si:H and the electrode has optimal transparency and conductivity after heat treatment.
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申请人 |
SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE |
发明人 |
HELLER, SUSANNE, 8085 HAUSEN, DE;HOHEISEL, MARTIN, DR.RER.NAT.;MROTZEK, CHRISTINE, 8000 MUENCHEN, DE;MUELLER, WERNER, 8025 UNTERHACHING, DE |