Mfg. integrated circuit with two complementary bipolar transistors - doping full surface conductive layer as first conductivity for base of one, and emitter coupling for second transistor

摘要

The integrated circuit with two complementary, bipolar transistors is mfd. by depositing a first conductive layer (181) on the entire surface, with first conductivity doping. From it is formed a base terminal (181) for the first transistor, and an emitter terminal (182) for the second one. The surface and sides of the two terminals are coated with an insulating structure (21). A second conductive layer of second conductivity doping is applied, and a base terminal (223) is formed from it for the second transistor, and an emitter terminal (221) for the first one. USE/ADVANTAGE - Wide band amplifies, rapid comparators, and transimpedance boosters, with self adjustment of both transistors.