| 摘要 |
PURPOSE:To shorten a ROM in manufacturing time by a method wherein a a bit line connected to a drain region through a contact hole bored in the interlaminar insulating film of a MOS transistor is formed, and a silicon film is deposited thereon, which is thermally treated. CONSTITUTION:A field oxide film 2 is formed on a substrate 1, an oxide film 3 is formed through thermal oxidation, a polysilicon layer is deposited, which is patterned for the formation of a gate electrode 4, and ions are implanted using the gate electrode 4 and the field oxide film 2 as a mask to form a source region 5s and a drain region 5d in the substrate 1. An interlaminar insulating film 6 is formed on the whole surface of the substrate 1, the oxide film 3 and the interlaminar insulating film 6 formed on the drain region 5d are removed for providing a contact hole 6a. An Al wiring layer is deposited to serve as a bit line 7, a passivation film 8 is deposited, and then program data is obtained. In succession, a photoresist 9 is applied and then developed, and the film 8 is etched using the photoresist 9 as a mask to make the bit line 7 exposed, an amorphous silicon film 10 is deposited, which thermally treated to form a deposited silicon layer 11. By this setup, processes are reduced in number after data are obtained. |
