| 摘要 |
PURPOSE:To shorten a semiconductor device in manufacturing process by a method wherein a high melting point metal polycide film is formed on the primary face of a substrate through the intermediary of a gate insulating film, which is formed into a gate electrode, and ions are implanted to form a source and a drain diffusion layer. CONSTITUTION:A gate insulating film 2, a polycrystalline silicon film 3, and a high melting point metal silicide film 4 are formed on a P-type semiconductor substrate 1 of silicon or the like, a gate electrode forming mask pattern 5 of photoresist or the like is formed, and a gate electrode is formed through a dry etching process or the like. In succession, a threshold voltage control mask pattern 6 is formed of photoresist or the like, and N-type ion species used for controlling a threshold voltage and forming a source and a drain are implanted. The ion implanted high melting point metal silicide film 4 is changed in stress and a MOS transistor possessed of two threshold voltage is formed. By this setup, a semiconductor device can be reduced in number of processes and cost and improved in yield. |
