| 摘要 |
A turn-off thyristor system has, in the same semiconductor body (H1), a transistor structure (QP0) and a plurality of thyristor modules (QP1, QN1) connected in parallel with said transistor structure. The thyristor modules have MOS transistors (MN1) integrated in the semiconductor body and adapted to bring the system into conducting state by firing. Further, the system has a turn-off member, common to the thyristor modules, in the form of an MOS transistor (MN2) formed in a separate semiconductor body (H2), said turn-off member being adapted, for turn-off of the system, to shunt the individual emitter junctions of the thyristor modules. |
