| 摘要 |
PURPOSE:To make each of split word lines small in charge storage so as to sharply decrease a MOS transistor in probability of damage by a method wherein a semiconductor device is composed of a large number of the arranged memory cells M provided with a MOS transistor respectively, where the memory cells M are divided into units composed of a few cells, and a work line WL is divided into the split word lines WLu for blocks. CONSTITUTION:A large number of memory cells M are arranged on columns and raws, a common ground line ELb is provided to the memory cells M arranged on common two columns adjacent to each other and grounded to a common ground line EL arranged nearly along set lines B and B between groups composed of two or more columns respectively. The memory cells M are grouped in each block BL for each ground line EL provided in common, a word line WL is divided into split word lines WLu for each block BL, and the corresponding split word lines WLu are connected together through another conductive layer 11 in an after process to constitute a common word line WL for each column. |
