| 摘要 |
<p>A photoelectric converting device comprises a first semiconductor area of a first conductive type, a second semiconductor area of a second conductive type, and a third semiconductor area of the first conductive type. A charge is photoelectrically generated by the light incident on the second semiconductor area derived from the first semiconductor area. A fourth semiconductor area of the second conductive type is formed in contact with the second semiconductor area and having a higher impurity concentration than in the second semiconductor area. A fifth semiconductor area of the first conductive type is formed in contact with the fourth semiconductor area and having an impurity concentration approximately same as in the fourth semiconductor area. In the fourth and fifth semiconductor areas, the electron ionization rate alpha n, electron velocity vn and depletion layer width W satisfy a relation alpha n.vn.W > 1 or the hole ionization rate alpha p, hole velocity vp and depletion layer width W satisfy a relation alpha p.vp.W > 1. <IMAGE></p> |
